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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW30N60/D Designer'sTM Data Sheet Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability. Short circuit rated IGBT's are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. * Industry Standard High Power TO-247 Package with Isolated Mounting Hole * High Speed Eoff: 60 mJ per Amp typical at 125C * High Short Circuit Capability - 10 ms minimum * Robust High Voltage Termination * Robust RBSOA MGW30N60 Motorola Preferred Device IGBT IN TO-247 30 A @ 90C 50 A @ 25C 600 VOLTS SHORT CIRCUIT RATED C G E G C E CASE 340F-03, Style 4 TO-247AE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage (RGE = 1.0 M) Gate-Emitter Voltage -- Continuous Collector Current -- Continuous @ TC = 25C -- Continuous @ TC = 90C -- Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, 6-32 or M3 screw (1) Pulse width is limited by maximum junction temperature. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Symbol VCES VCGR VGE IC25 IC90 ICM PD TJ, Tstg tsc RJC RJA TL Value 600 600 20 50 30 100 202 1.61 - 55 to 150 10 0.62 45 260 10 lbfSin (1.13 NSm) Unit Vdc Vdc Vdc Adc Apk Watts W/C C ms C/W C Preferred devices are Motorola recommended choices for future use and best overall value. (c) Motorola TMOS Motorola, Inc. 1995 Power MOSFET Transistor Device Data 1 MGW30N60 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 Adc) Temperature Coefficient (Positive) Emitter-to-Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGE = 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) Collector-to-Emitter On-State Voltage (VGE = 15 Vdc, IC = 15 Adc) (VGE = 15 Vdc, IC = 15 Adc, TJ = 125C) (VGE = 15 Vdc, IC = 30 Adc) Gate Threshold Voltage (VCE = VGE, IC = 1 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, IC = 30 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Gate Charge (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc) INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 from package to emitter bond pad) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. LE -- 13 -- nH (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 , TJ = 125C) Energy losses include "tail" (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 , TJ = 25C) Energy losses include "tail" td(on) tr td(off) tf Eoff td(on) tr td(off) tf Eoff QT Q1 Q2 -- -- -- -- -- -- -- -- -- -- -- -- -- 76 80 348 188 0.98 73 95 394 418 1.90 150 30 45 -- -- -- -- 1.28 -- -- -- -- -- -- -- -- mJ nC mJ ns ns (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) Cies Coes Cres -- -- -- 4280 275 19 -- -- -- pF VCE(on) -- -- -- VGE(th) 4.0 -- gfe -- 6.0 10 15 8.0 -- -- 2.20 2.10 2.60 2.90 -- 3.45 Vdc mV/C Mhos Vdc BVCES 600 -- BVECS ICES -- -- IGES -- -- -- -- 100 2500 250 nAdc 25 -- 870 -- -- -- -- Vdc mV/C Vdc Adc Symbol Min Typ Max Unit 2 Motorola TMOS Power MOSFET Transistor Device Data MGW30N60 TYPICAL ELECTRICAL CHARACTERISTICS 60 TJ = 25C IC, COLLECTOR CURRENT (AMPS) VGE = 20 V 17.5 V 40 15 V 12.5 V IC, COLLECTOR CURRENT (AMPS) 10 V 60 TJ = 125C VGE = 20 V 17.5 V 40 15 V 12.5 V 10 V 20 20 0 0 1 2 3 4 5 0 0 1 2 3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics, TJ = 25C 60 IC, COLLECTOR CURRENT (AMPS) VCE , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 3 Figure 2. Output Characteristics, TJ = 125C VCE = 100 V 5 s PULSE WIDTH TJ = 125C VGE = 15 V 80 s PULSE WIDTH IC = 30 A 40 2.6 22.5 A 25C 20 15 A 2.2 0 5 6 7 8 9 10 11 1.8 - 50 0 50 100 150 VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 3. Transfer Characteristics Figure 4. Collector-to-Emitter Saturation Voltage versus Junction Temperature 6400 5600 C, CAPACITANCE (pF) 4800 4000 3200 2400 1600 800 0 0 Cres 5 10 15 Coes Cies TJ = 25C VCE = 0 V VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) 7200 16 QT 12 8 Q1 Q2 TJ = 25C IC = 30 A 4 20 25 0 0 20 40 60 80 100 120 140 GATE-TO-EMITTER OR COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Variation Figure 6. Gate-to-Emitter Voltage versus Total Charge Motorola TMOS Power MOSFET Transistor Device Data 3 MGW30N60 3 TURN-OFF ENERGY LOSSES (mJ) 2.5 2 1.5 1 10 A 0.5 0 20 A TURN-OFF ENERGY LOSSES (mJ) VCC = 360 V VGE = 15 V TJ = 125C 3 2.5 2 1.5 1 0.5 0 IC = 30 A 20 A 10 A VCC = 360 V VGE = 15 V RG = 20 IC = 30 A 10 20 30 40 50 0 25 50 75 100 125 150 RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (C) Figure 7. Turn-Off Losses versus Gate Resistance IC, COLLECTOR-TO-EMITTER CURRENT (A) 2 TURN-OFF ENERGY LOSSES (mJ) VCC = 360 V VGE = 15 V RG = 20 TJ = 125C 100 Figure 8. Turn-Off Losses versus Junction Temperature 1.6 10 1.2 0.8 1 VGE = 15 V RGE = 20 TJ = 125C 0.1 1 10 100 1000 0.4 0 0 5 10 15 20 25 30 IC, COLLECTOR-TO-EMITTER CURRENT (AMPS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 9. Turn-Off Losses versus Collector-to-Emitter Current Figure 10. Reverse Biased Safe Operating Area 4 Motorola TMOS Power MOSFET Transistor Device Data MGW30N60 PACKAGE DIMENSIONS 0.25 (0.010) M -Q- TBM -T- E -B- U C 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 20.40 20.90 15.44 15.95 4.70 5.21 1.09 1.30 1.50 1.63 1.80 2.18 5.45 BSC 2.56 2.87 0.48 0.68 15.57 16.08 7.26 7.50 3.10 3.38 3.50 3.70 3.30 3.80 5.30 BSC 3.05 3.40 GATE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.803 0.823 0.608 0.628 0.185 0.205 0.043 0.051 0.059 0.064 0.071 0.086 0.215 BSC 0.101 0.113 0.019 0.027 0.613 0.633 0.286 0.295 0.122 0.133 0.138 0.145 0.130 0.150 0.209 BSC 0.120 0.134 L A R 1 2 3 K P -Y- F D 0.25 (0.010) M V G H J YQ S STYLE 4: PIN 1. 2. 3. 4. CASE 340F-03 TO-247AE ISSUE E Motorola TMOS Power MOSFET Transistor Device Data 5 MGW30N60 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 MGW30N60/D Motorola TMOS Power MOSFET Transistor Device Data *MGW30N60/D* |
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